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Innogration and ST to cooperate for RF LDMOS

Suzhou,March 1st,2018 – Innogration Technologies,a fabless semiconductor company headquartered in Suzhou,China,specializing in the design and manufacturing of RF power semiconductor devices,modules,and sub-system assemblies,announced it has signed an agreement by licensing its LDMOS RF power technology to STMicroelectronics(NYSE: STM),a global semiconductor leader serving customers across the spectrum of electronics applications.


RF LDMOS remains industry focus for many lower radio bands and cost effective RF Power applications.“We are pleased to see the adoption by ST then the cooperation agreement made, for our field proven LDMOS technology,we will team up with ST closely to address multiple market needs in emerging RF Energy,ISM,and Mobile radio communication etc, by leveraging the advantages of both sides”,remarked by YingHao Zhuo, Head of Product marketing, Innogration Technologies.


Terms of the agreements were not disclosed.

ST announcement as follows
http://www.st.com/content/st_com/en/about/media-center/press-item.html/t4023.html

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