As a new generation compound semiconductor technology, GaN is being adopted quickly by RF Power applications with demanding performance requirement. Innogration positions GaN as key enabler for higher bands, higher performance, for either pulsed or modulation solution.
Highlight
• 28 to 50V power supply
• Made by the field proven process in the leading compound fab with stable and high volume supply
• Low thermal impact due to advanced backside process and optimized package choice
• Supplemented by in house MOSCAP/MIMCAP/IPD
Application
• All wireless radio interface:5G NR/LTE/WCDMA/GSM/CDMA
• wideband radio communication, CW Jammer, commercial pulse amplifier
• Extremely wide band EMC test